SRC, Stanford, TSMC demo copolymer lithography (EETimes)

Semiconductor Research Corp. (SRC), Stanford University and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) claim that they have developed a top-gated field effect transistor (FET) and CMOS inverters featuring 20-nm contact holes. Stanford University - Field-effect transistor - CMOS - United States - Semiconductor

SRC, Stanford, TSMC demo copolymer lithography (EETimes)

Semiconductor Research Corp. (SRC), Stanford University and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) claim that they have developed a top-gated field effect transistor (FET) and CMOS inverters featuring 20-nm contact holes.

Semiconductor Research Corporation and Stanford University Demonstrate Advance That Could Extend Life of Cost … (Business Wire via Yahoo! Finance)

BALTIMORE----Semiconductor Research Corporation , the world's leading university-research consortium for semiconductors and related technologies, and researchers from Stanford University and Taiwan Semiconductor Manufacturing Company today announced they have developed the industry’s first top-gated field effect transistor and CMOS inverters featuring 20 nanometer contact holes using diblock ...